abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v drm = 4500 v i tgqm = 4000 a i tsm = 3510 3 a v (t0) = 1.15 v r t = 0.21 m w v dc-link = 2800 v asymmetric integrated gate- commutated thyristor 5shy 35l4512 doc. no. 5sya1233-02 june 07 lowest on state voltage (2v @ 4000a) optimized for low frequency (<100 hz) and wide temperature range high reliability high electromagnetic immunity simple control interface with status feedback ac or dc supply voltage contact factory for series connection blocking maximum rated values 1) parameter symbol conditions min typ max unit rep. peak off-state voltage v drm gate unit energized 4500 v permanent dc voltage for 100 fit failure rate of gct v dc-link ambient cosmic radiation at sea level in open air. gate unit energized 2800 v off-state 17 v reverse voltage v rrm igct in on-state 10 v characteristic values parameter symbol conditions min typ max unit rep. peak off-state current i drm v d = v drm , gate unit energized 50 ma mechanical data (see fig. 11, 12) maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 36 40 44 kn characteristic values parameter symbol conditions min typ max unit pole-piece diameter d p 0.1 mm 85 mm housing thickness h 25.3 25.8 mm weight m 2.9 kg surface creepage distance d s anode to gate 33 mm air strike distance d a anode to gate 10 mm length l 1.0 mm 439 mm height h 1.0 mm 40 mm width igct w 1.0 mm 173 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 2 of 9 gct data on-state (see fig. 3, 4, 5, 6, 14, 15) maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i t(av)m half sine wave, t c = 85 c, double side cooled 2100 a max. rms on-state current i t(rms) 3300 a max. peak non-repetitive surge on-state current i tsm 3510 3 a limiting load integral i 2 t t p = 10 ms, tj = 125 c, sine wave after surge: v d = v r = 0 v 6.110 6 a 2 s max. peak non-repetitive surge on-state current i tsm 2310 3 a limiting load integral i 2 t t p = 30 ms, tj = 125 c, sine wave after surge: v d = v r = 0 v 7.910 6 a 2 s stray inductance between gct and antiparallel diode l d only relevant for applications with antiparallel diode to the igct 300 nh critical rate of rise of on- state current di t /dt cr for higher di t /dt and current lower than 100 a an external retrigger puls is required. 200 a/s characteristic values parameter symbol conditions min typ max unit on-state voltage v t i t = 4000 a, t j = 125 c 1.8 2 v threshold voltage v (t0) 1.15 v slope resistance r t t j = 125 c i t = 1000...4000 a 0.21 m w turn-on switching (see fig. 14, 15) maximum rated values 1) parameter symbol conditions min typ max unit critical rate of rise of on- state current di t /dt cr f = 0..500 hz, t j = 125 c, v d = 2800 v, i tm 4000 a 1000 a/s characteristic values parameter symbol conditions min typ max unit turn-on delay time t don 3.5 s turn-on delay time status feedback t don sf 7 s rise time t r 1 s turn-on energy per pulse e on v d = 2800 v, t j = 125 c i t = 4000 a, di/dt = v d / l i l i = 5 h c cl = 10 f, l cl = 0.3 h 1.5 j turn-off switching (see fig. 7, 8, 10, 14, 15) maximum rated values 1) parameter symbol conditions min typ max unit characteristic values parameter symbol conditions min typ max unit turn-off delay time t doff 11 s turn off delay time status feedback t doff sf 7 s turn-off energy per pulse e off v d = 2800 v, t j = 125 c v dm v drm , r s = 0.65 w i tgq = 4000 a, l i = 5 h c cl = 10 f, l cl = 0.3 h 26 37 j
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 3 of 9 gate unit data power supply (see fig. 2, 9, 10, 12, 13) maximum rated values 1) parameter symbol conditions min typ max unit gate unit voltage (connector x1) v gin,rms ac square wave amplitude (15 khz - 100khz) or dc voltage. no galvanic isolation to power circuit. 28 40 v min. current needed to power up the gate unit i gin min rectified average current see application note 5sya 2031 2.1 a gate unit power consumption p gin max 100 w characteristic values parameter symbol conditions min typ max unit internal current limitation i gin max rectified average current limited by the gate unit 8 a optical control input/output 2) maximum rated values 1) parameter symbol conditions min typ max unit min. on-time t on 40 s min. off-time t off 40 s characteristic values parameter symbol conditions min typ max unit optical input power p on cs -15 -1 dbm optical noise power p off cs -45 dbm optical output power p on sf -19 -1 dbm optical noise power p off sf cs: control signal sf: status feedback valid for 1mm plastic optical fiber (pof) -50.0 dbm pulse width threshold t glitch max. pulse width without response 400 ns external retrigger pulse width t retrig 600 1100 ns 2) do not disconnect or connect fiber optic cables while light is on. connectors 2) (see fig. 11, 12, 13) parameter symbol description gate unit power connector x1 amp: mta-156, part number 641210-5 3) lwl receiver for command signal cs agilent, type hfbr-2528 4) lwl transmitter for status feedback sf agilent, type hfbr-1528 4) 2) do not disconnect or connect fiber optic cables while light is on. 3) amp, www.amp.com 4) agilent technologies, www.semiconductor.agilent.com visual feedback (see fig. 13) parameter symbol description color gate off led1 "light" when gct is off (green) gate on led2 "light" when gate-current is flowing (yellow) fault led3 "light" when not ready / failure (red) power supply voltage ok led4 "light" when power supply is within specified range (green)
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 4 of 9 thermal maximum rated values 1) parameter symbol conditions min typ max unit junction operating temperature t vj -40 125 c storage temperature range t stg -40 60 c ambient operational temperature t a -40 50 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction-to-case of gct r th(j-c) double side cooled 8.5 k/kw thermal resistance case-to- heatsink of gct r th(c-h) double side cooled 3 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i c) - th(j i ? = t i 1 2 3 4 r i (k/kw) 5.562 1.527 0.868 0.545 t i (s) 0.5119 0.0896 0.0091 0.0024 fig. 1 transient thermal impedance (junction-to- case) vs. time (max. values) max. turn-off current for lifetime operation calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature fig. 2 max. turn-off current vs. frequency for lifetime operation
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 5 of 9 max. on-state characteristic model: v t25 t tvj t tvj t tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i t = 300 ? 30000 a max. on-state characteristic model: v t125 t tvj t tvj t tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i t = 300 ? 30000 a a 25 b 25 c 25 d 25 a 125 b 125 c 125 d 125 663.910 -3 123.210 -6 79.7110 -3 0.0 178.010 -3 159.810 -6 142.710 -3 0.0 fig. 3 gct on-state voltage characteristics fig. 4 gct on-state voltage characteristics fig. 5 surge on-state current vs. pulse length, half- sine wave fig. 6 surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50hz
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 6 of 9 fig. 7 gct turn-off energy per pulse vs. turn-off current fig. 8 safe operating area fig. 9 max. gate unit input power in chopper mode fig. 10 burst capability of gate unit
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 7 of 9 fig. 11 outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise 1) v gin (ac or dc+) 2) v gin (ac or dc+) 3) cathode 4) v gin (ac or dc-) 5) v gin (ac or dc-) fig. 12 detail a: pin out of supply connector x1 logic monitoring turn- off circuit turn- on circuit gate cathode internal supply (no galvanic isolation to power circuit) x1 cs rx command signal (light) tx status feedback (light) anode sf as-igct gate unit as-gct supply (v gin ) led1 led2 led3 led4 fig. 13 block diagram
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1233-02 june 07 page 8 of 9 i t v dsp v dm v d 0.4 i tgq turn-off t doff cs sf t doff sf cs t r i t i tm di t /dt 0.9 v d 0.1 v d v d turn-on t don sf t don sf external retrigger pulse cs t retrig sf v d t on t off fig. 14 general current and voltage waveforms with igct - specific symbols l cl l i r s dut l load c cl v dc l d fig. 15 test circuit
5shy 35l4512 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1233-02 june 07 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors related documents: 5sya 2031 applying igct gate units 5sya 2032 applying igcts 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors 5sya 2046 failure rates of igcts due to cosmic rays 5sya 2048 field measurements on high power press pack semiconductors 5sya 2051 voltage ratings of high power semiconductors 5szk 9107 specification of enviromental class for pressure contact igcts, operation available on request, please contact factory please refer to http://www.abb.com/semiconductors for current version of documents.
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